Negative Capacitance Transistor with a Diffusion Blocking Layer

ABSTRACT

A semiconductor device includes a substrate. The semiconductor device includes a dielectric layer disposed over a portion of the substrate. The semiconductor device includes a diffusion blocking layer disposed over the dielectric layer. The diffusion blocking layer and the dielectric layer have different material compositions. The semiconductor device includes a ferroelectric layer disposed over the diffusion blocking layer.

PRIORITY DATA

This present application is a continuation of U.S. patent applicationSer. No. 16/284,871, filed Feb. 25, 2019, which is a utility applicationof Provisional U.S. Patent Application No. 62/690,659, filed Jun. 27,2018, entitled “NEGATIVE CAPACITANCE TRANSISTOR WITH A DIFFUSIONBLOCKING LAYER”, the disclosure of which is hereby incorporated byreference in its entirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC design and material have producedgenerations of ICs where each generation has smaller and more complexcircuits than previous generations. In the course of IC evolution,functional density (i.e., the number of interconnected devices per chiparea) has generally increased while geometry size (i.e., the smallestcomponent (or line) that can be created using a fabrication process) hasdecreased.

Transistors are circuit components or elements that are often formed onsemiconductor devices. Many transistors may be formed on a semiconductordevice in addition to capacitors, inductors, resistors, diodes,conductive lines, or other elements, depending on the circuit design. Afield effect transistor (FET) is one type of transistor. Generally, atransistor includes a gate stack formed between source and drainregions. The source and drain regions may include a doped region of asubstrate and may exhibit a doping profile suitable for a particularapplication. The gate stack is positioned over the channel region andmay include a gate dielectric interposed between a gate electrode andthe channel region in the substrate. However, existing methods anddevices have not been able to form a gate stack with satisfactorynegative capacitance performance.

Therefore, although existing methods of fabricating IC devices have beengenerally adequate for their intended purposes, they have not beenentirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-7 and 7A are cross-sectional views of an example semiconductordevice in accordance with some embodiments.

FIG. 8 is a capacitance model of a semiconductor device in accordancewith some embodiments.

FIGS. 9A, 9B, and 9C illustrate remanent polarization v.s. coercivefield plots of various materials.

FIG. 10 is a flowchart of an example method for fabricating asemiconductor device constructed in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Still further, when a number or a range of numbers is described with“about,” “approximate,” and the like, the term is intended to encompassnumbers that are within a reasonable range including the numberdescribed, such as within +/−10% of the number described or other valuesas understood by person skilled in the art. For example, the term “about5 nm” encompasses the dimension range from 4.5 nm to 5.5 nm.

Integrated Circuit (IC) devices have been evolving rapidly over the lastseveral decades. A typical IC chip may include numerous active devicessuch as transistors and passive devices such as resistors, inductors,and capacitors. Recently, negative capacitance devices have been made atleast in part via the fabrication of field effect transistors (FETs). Inmore detail, a negative capacitance device may be formed using a gatestructure of a FET device that includes a ferroelectric film. Negativecapacitance devices may offer advantages, such as lower subthresholdswing. Subthreshold swing represents the ease of switching thetransistor current off and on and is a factor in determining theswitching speed of a FET device. Subthreshold swing allows for FETdevices having higher switching speed compared to conventional FETdevices. Negative capacitance devices may be utilized in application inmetal-oxide-semiconductor field-effect transistors (MOSFETs) with veryshort channel length for ultra-low power computing. However, negativecapacitance devices may suffer from undesirable diffusion of dopantsfrom a ferroelectric film into the materials therebelow, which maydegrade the performance of the negative capacitance device. Furthermore,negative capacitance devices may be constrained by a small capacitancematching window.

To overcome the problems discussed above, the present disclosurepertains to a negative capacitance device having improved performance aswell as flexible capacitance tuning. For example, the present disclosureimplements a gate structure (e.g., a gate structure of a FET transistor)that includes: a high-k dielectric layer, a ferroelectric film disposedover the high-k dielectric layer, a metal gate electrode disposed overthe ferroelectric film, and a diffusion blocking layer sandwichedbetween the high-k dielectric layer and the ferroelectric film.

The diffusion blocking layer is one of the unique aspects of the presentdisclosure, as it prevents (or at least reduces) an undesirablediffusion of dopants from the ferroelectric film into the materialstherebelow during thermal processes, for example diffusion into thehigh-k dielectric layer or even into a channel region (below the high-kdielectric layer) of the transistor. The elimination or reduction ofthis undesirable dopant diffusion helps prevent the high-k dielectriclayer and/or the channel region from being otherwise contaminated by thedopants. As a result, the quality of the high-k dielectric layer and thechannel region is enhanced, and the ferroelectric film itself can alsoachieve a more stable crystalline phase and quality, thereby improvingoverall device performance.

The implementation of the diffusion blocking layer also provides anadditional degree of freedom (or an extra capacitance matchingparameter) in tuning the capacitance of the negative capacitancetransistor. For example, the material composition and/or the thicknessof the diffusion blocking layer can be configured to flexibly tune thecapacitance of the negative capacitance device. Consequently, thepresent disclosure can widen the capacitance matching window of thenegative capacitance transistor without creating hysteresis, which wouldhave been undesirable. The various aspects of the present disclosure arenow discussed in more detail below with reference to FIGS. 1-9.

FIGS. 1-7 are diagrammatic fragmentary cross-sectional side views of asemiconductor device 200 at various stages of fabrication in accordancewith some embodiments. Referring now to FIG. 1, the semiconductorstructure 200 includes a substrate 210. The substrate 210 includessilicon in some embodiments. Alternatively or additionally, thesubstrate 210 may include other elementary semiconductor such asgermanium. The substrate 210 may also include a compound semiconductorsuch as silicon carbide, gallium arsenic, indium arsenide, and indiumphosphide. The substrate 210 may also include an alloy semiconductorsuch as silicon germanium, silicon germanium carbide, gallium arsenicphosphide, and gallium indium phosphide. In one embodiment, thesubstrate 210 includes an epitaxial layer. For example, the substrate210 may have an epitaxial layer overlying a bulk semiconductor.Furthermore, the substrate 210 may include a semiconductor-on-insulator(SOI) structure. For example, the substrate 210 may include a buriedoxide (BOX) layer formed by a process such as separation by implantedoxygen (SIMOX) or other suitable technique, such as wafer bonding andgrinding.

The substrate 210 may also include various p-type doped regions and/orn-type doped regions, implemented by a process such as ion implantationand/or diffusion. Those doped regions include n-well, p-well, lightdoped region (LDD) and various channel doping profiles configured toform various integrated circuit (IC) devices, such as a complimentarymetal-oxide-semiconductor field-effect transistor (CMOSFET), imagingsensor, and/or light emitting diode (LED).

The substrate 210 may also include various electrical isolation regions.The electrical isolation regions provide electrical isolation betweenvarious device regions (such as the doped regions) in the substrate 210.The electrical isolation regions may include different structures formedby using different processing technologies. For example, the electricalisolation regions may include shallow trench isolation (STI) structures.The formation of an STI structure may include etching a trench in thesubstrate 210 and filling in the trench with one or more insulatormaterials such as silicon oxide, silicon nitride, silicon oxynitride, orcombinations thereof. The filled trench may have a multi-layer structuresuch as a thermal oxide liner layer with silicon nitride filling thetrench. A polishing or planarization process such as chemical mechanicalpolishing (CMP) may be performed to polish back excessive insulatormaterials and planarize the top surface of the isolation features.

A dummy gate structure 220 is formed over a portion of the substrate210. In some embodiments, the dummy gate structure 220 includes a dummygate dielectric and a dummy gate electrode. The dummy gate dielectricmay include silicon oxide, and the dummy gate dielectric may includepolysilicon. The dummy gate structure 220 may be formed by forming adummy gate dielectric layer and a dummy gate electrode layer and patternthe dummy gate dielectric layer and the dummy gate electrode layer. Thedummy gate structure 220 may further include gate spacers formed onsidewalls of the dummy gate electrode and the dummy gate dielectric. Forreasons of simplicity, the gate spacers are not specifically illustratedherein.

Source/drain regions are then formed on opposite sides of the dummy gatestructure 220. For example, a source region 230 is formed in thesubstrate 210 and on the “left” side of the dummy gate structure 220 inFIG. 1, and a drain region 231 is formed in the substrate 210 and on the“right” side of the dummy gate structure 220 in FIG. 1. The sourceregion 230 and the drain region 231 may be formed by one or more ionimplantation processes, in which N-type or P-type dopant ions areimplanted in the substrate 210, depending on the type of substrate 210and the type of transistor desired (e.g., NFET or PFET). A channelregion 240 is defined as a portion of the substrate 210 that is locatedbetween the source region 230 and the drain region 231. It is understoodthat the source region 230, the drain region 231, and the channel region240 are components of a negative capacitance FET device. It is alsounderstood that the source region 230 and the drain region 231 may beseparated from adjacent doped features (e.g., other source/drain regionsof nearby transistors) by electrical isolation regions such as STIs.

Referring now to FIG. 2, an interlayer dielectric (ILD) 250 is formedover the source and drain regions 230-231 and around the dummy gatestructure 220. In some embodiments, the ILD 250 includes a dielectricmaterial, such as a low-k dielectric material (a dielectric materialwith a dielectric constant smaller than that of silicon dioxide). Asnon-limiting examples, the low-k dielectric material may includefluorine-doped silicon dioxide, carbon-doped silicon dioxide, poroussilicon dioxide, porous carbon-doped silicon dioxide, spin-on organicpolymeric dielectrics, spin-on silicon based polymeric dielectrics, orcombinations thereof. Alternatively, the ILD 250 may include siliconoxide or silicon nitride, or combinations thereof. The dummy gatestructure 220 is then removed to form an opening 260 in place of theremoved dummy gate structure 220. As a part of a gate replacementprocess, the opening 260 will be filled by a functional gate structurethat includes a high-k gate dielectric and a metal gate electrode, aswell as a ferroelectric film and a diffusion blocking layer, asdiscussed below in more detail.

Referring now to FIG. 3, an interfacial layer 280 is formed over thechannel region 240 in the opening 260. In some embodiments, theinterfacial layer 280 includes an oxide material such as silicon oxide.The interfacial layer 280 serves as an interface between the channel andthe gate structure (to be formed by the subsequent processes).

A high-k dielectric layer 290 is then formed in the opening 260 and overthe interfacial layer 280. The high-k dielectric layer 290 may serve asa part of a gate dielectric component of a high-k metal gate (HKMG)structure. In some embodiments, the high-k dielectric layer 290 mayinclude a material having a dielectric constant that is greater than adielectric constant of SiO₂, which is approximately 4. In an embodiment,the high-k dielectric layer 290 includes hafnium oxide (HfO₂), which hasa dielectric constant that is in a range from approximately 18 toapproximately 40. In alternative embodiments, the high-k gate dielectricmay include ZrO₂, Y₂O₃, La₂O₅, Gd₂O₅, TiO₂, Ta₂O₅, HfErO, HfLaO, HfYO,HfGdO, HfAlO, HfZrO, HfTiO, HfTaO, or SrTiO. The high-k dielectric layer290 may be formed by a suitable deposition process. In some embodiments,the deposition process includes an atomic layer deposition (ALD)process, which may be performed in a temperature range from about 200degrees Celsius and about 400 degrees Celsius. The mechanism of the ALDprocess may help control a thickness 295 of the high-k dielectric layer290 with better precision and uniformity, and a relatively low processtemperature (e.g., compare to other types of deposition processes) ofthe ALD process helps the fabrication of the semiconductor device 200stay within a specified thermal budget. In some embodiments, thethickness 295 is configured to be in a range from about 1 nanometer (nm)to about 3 nm. However, the deposition used to form the high-kdielectric layer 290 is not limited to ALD. For example, in otherembodiments, the high-k dielectric layers 290 may be formed bydeposition processes such a chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD), metal-organic chemical vapordeposition (MOCVD), physical vapor deposition (PVD), etc.

Referring now to FIG. 4, a diffusion blocking layer 300 is formed in theopening 260 and over the high-k dielectric layer 290. The diffusionblocking layer 300 may be formed by a deposition process 310. In someembodiments, the deposition process 310 includes an ALD process, whichas discussed above may help control a thickness of the diffusionblocking layer 300 with better precision and improved uniformity. Forexample, a thickness 315 of the diffusion blocking layer 300 isconfigured (e.g., by the deposition process 310) to be in a range fromabout 1 nm to about 3 nm. This thickness range allows the diffusionblocking layer 300 to adequately serve its purposes. As a non-limitingexample, the diffusion blocking layer 300 may advantageously prevent orreduce dopant diffusion from a ferroelectric layer formed thereaboveinto the high-k dielectric layer 290 disposed therebelow. This isbecause the material composition of the diffusion blocking layer 300 isconfigured to be a more stable material that does not react with thedopant of the ferroelectric layer. For example, in embodiments where theferroelectric layer is a hafnium-based layer that is doped with azirconium dopant, the diffusion blocking layer 300 may be configured toinclude aluminum oxide. Aluminum oxide is more stable than the high-kdielectric layer 290 below and does not react with the zirconium dopant,and as such the zirconium dopant will be blocked.

As another non-limiting example, the diffusion blocking layer 300 mayadvantageously provide more flexibility in capacitance matching for agate structure. These roles or functionalities of the diffusion blockinglayer 300 will be discussed in more detail below. The value range of thethickness 315 is optimized. For example, if the thickness 315 is toothin, it may not be able to sufficiently block the dopant diffusion. Onthe other hand, if the thickness 315 is too thick, it may undulyincrease overall gate height, as well as possibly interfering with theintended operations of the transistor. In some embodiments, thedeposition process 310 may be performed at a temperature range fromabout 200 degrees Celsius and about 400 degrees Celsius. As discussedabove, this relatively low deposition process temperature helps thecontrol of a thermal budget during the fabrication of the semiconductordevice 200.

It is understood that other types of deposition such as CVD, PECVD,MOCVD, or PVD may be used to form the diffusion blocking layer as well.It is also understood that although FIG. 4 illustrates one diffusionblocking layer 300, additional diffusion blocking layers may beimplemented in alternative embodiments. Stated differently, thediffusion blocking layer 300 may include one layer of a diffusionblocking material, or it may include a plurality of sub-layers eachhaving a different diffusion blocking material.

The diffusion blocking layer 300 has a material composition differentthan the high-k dielectric layer 290 but is also formed to have arelatively high (e.g., compared to silicon oxide) dielectric constant.In some embodiments, the dielectric constant of the diffusion blockinglayer 300 is in a range from about 15 to about 60. In some embodiments,the diffusion blocking layer 300 includes a metal oxide material such asaluminum oxide (Al₂O₃), tantalum oxide (Ta₂O₅), titanium oxide (TiO₂),lanthanum oxide (La₂O₃), or praseodymium oxide (Pr₂O₃), and/or thenitride films thereof, and/or combinations thereof. The presence of thediffusion blocking layer 300 can be detected by techniques such asTransmission electron microscopy (TEM, which is a microscopy techniquein which a beam of electrons is transmitted through a specimen to forman image) and/or Energy-dispersive X-ray spectroscopy (EDX, whichutilizes an interaction of a source of X-ray excitation and a sample todetermine a material composition of the sample).

It is understood that one difference between the present disclosure andconventional devices where a high-k dielectric material may be used toimplement the gate dielectric layer is that, the present disclosureimplements the diffusion blocking layer 300 using a different high-kdielectric material than the high-k dielectric material used toimplement the gate dielectric layer. For example, if the gate dielectricmaterial includes hafnium oxide, the present disclosure may use aluminumoxide (as a non-limiting example) to implement the diffusion blockinglayer 300. As another example, if the gate dielectric material includesaluminum oxide, the present disclosure may use tantalum oxide (as anon-limiting example) to implement the diffusion blocking layer 300.

Referring now to FIG. 5, a ferroelectric film 330 is formed in theopening 260 and over the diffusion blocking layer 300. The ferroelectricfilm 330 may be formed by a deposition process 340. In some embodiments,the deposition process 340 includes an ALD process, which as discussedabove may help control a thickness of the ferroelectric film 330 withbetter precision and improved uniformity. For example, a thickness 345of the ferroelectric film 330 is configured (e.g., by the depositionprocess 340) to be in a range from about 1 nm to about 10 nm. Thisthickness range allows the ferroelectric film 330 to achieve negativecapacitance and/or amplify a gate voltage. In some embodiments, thedeposition process 340 may be performed at a temperature range fromabout 200 degrees Celsius and about 400 degrees Celsius. As discussedabove, this relatively low deposition process temperature helps thecontrol of a thermal budget during the fabrication of the semiconductordevice 200. In other embodiments, other types of deposition such as CVD,PECVD, MOCVD, or PVD may be used to form the ferroelectric film 330.

In some embodiments, the ferroelectric film 330 includes hafniumzirconium oxide, hafnium silicon oxide, hafnium aluminum oxide, leadzirconium titanium oxide, or barium titanium oxide, or combinationsthereof. The formation of the ferroelectric film 330 also includes adoping step, in which the deposited ferroelectric film 330 is doped withdopants. For example, the ferroelectric film 330 may be doped (e.g., viaan implantation process and/or a diffusion process) with dopants such aszirconium (Zr), silicon (Si), aluminum (Al), lead (Pb), barium (B a),titanium (Ti), and/or polymers for organic ferroelectric materials. Hadthe diffusion blocking layer 300 not been formed, the ferroelectric film330 would have been in direct physical contact with the high-kdielectric layer 290. As a result, the dopants from the ferroelectricfilm 330 may easily diffuse into the high-k dielectric layer 290, andpossibly even into the interfacial layer 280 or into the channel region240. The dopant diffusion problem may be even more pronounced orexacerbated during thermal processes. For example, a high temperatureannealing processes (e.g., performed at a temperature of several hundreddegrees Celsius) may be performed after (or as a part of) the formationof the ferroelectric film 330. Additional annealing processes may beperformed during the formation of a gate electrode (discussed later inmore detail). The higher temperatures of the annealing processes providean energy boost for the dopants, which may make it easier for them tomove about and potentially diffuse into the various layers therebelow,such as the high-k dielectric layer 290, the interfacial layer 280,and/or the channel region 240. When such dopant diffusion occurs, thehigh-k dielectric layer 290 and/or the interfacial layer 280 may beconsidered contaminated, which may degrade the quality of these layersand/or disrupt their intended functionalities.

Here, the implementation of the diffusion blocking layer 300—sandwichedin between the ferroelectric film 330 and the high-k dielectric layer290 layer—prevents or at least reduces the dopant diffusion from theferroelectric film 330. The reduction of dopant diffusion is due atleast in part to the nature of the various films, where an interface ofa ferroelectric material and a high-k dielectric material such as HfOprovides an easy path for the dopants to diffuse, but an interface of aferroelectric material and a diffusion blocking material such as Al₂O₃makes it more difficult for the dopants to diffuse. For example, asdiscussed above, Al₂O₃ does not react with a zirconium dopant of ahafnium based ferroelectric film and thus can adequately block thediffusion of the zirconium dopant. Of course, similar mechanisms applywhen the ferroelectric films 330 and the diffusion blocking layer 300are implemented with other types of materials. Furthermore, theinterfaces formed between materials such as Al₂O₃ (example material ofthe diffusion blocking layer 300) and a ferroelectric material andbetween Al₂O₃ and a high-k dielectric material are typically better inquality than an interface formed between Al₂O₃ and a high-k dielectricmaterial, and this will also reduce the interface mixing between thevarious layers, which could have degraded device quality otherwise.Thus, by configuring the material composition of the diffusion blockinglayer 300 to prevent or reduce dopant diffusion from the ferroelectriclayer 330, the present disclosure can improve device performance.

Referring now to FIG. 6, following the formation of the ferroelectriclayer 330, an annealing process 380 is performed to the semiconductordevice 200. As discussed above, in conventional device, the annealingprocess 380 could have caused the dopants from the ferroelectric layer330 to diffuse outwards, for example into the layers below. However, thediffusion blocking layer 300 of the present disclosure prevents orreduces the dopants of the ferroelectric layer 330 from being diffusedinto the high-k dielectric layer 290, or the interfacial layer 280, orthe channel region 240.

Referring now to FIG. 7, a metal gate electrode formation process 390 isperformed to form a metal gate electrode 400 in the opening 260. Themetal gate electrode formation process 390 may include a plurality ofdeposition processes, for example chemical vapor deposition (CVD),atomic layer deposition (ALD), physical vapor deposition (PVD), orcombinations thereof. The metal gate electrode 400 may include a workfunction metal component and a fill metal component. The work functionalmetal component is configured to tune a work function of itscorresponding transistor to achieve a desired threshold voltage Vt. Invarious embodiments, the work function metal component may contain:TiAl, TiAlN, TaCN, TiN, WN, or W, or combinations thereof. The fillmetal component is configured to serve as the main conductive portion ofthe functional gate structure. In various embodiments, the fill metalcomponent may contain Aluminum (Al), Tungsten (W), Copper (Cu), orcombinations thereof.

The metal gate electrode formation process 390 may also include one ormore annealing processes. For example, in some embodiments, the workfunction metal component and/or the fill metal component may include aplurality of metal layers. In these embodiments, a respective annealingprocess may be performed after the deposition of each metal layer of themetal gate electrode. The purposes of these annealing processes mayinclude (but are not limited to): lowering interface defects,crystalizing amorphous films, or adjusting or tuning threshold voltages(for example, for better chip reliability). As discussed above, theannealing processes may also unintentionally lead to dopant diffusion(from the ferroelectric layer 330 into one or more layers disposedtherebelow) in conventional devices. However, the diffusion blockinglayer 300 prevents or reduces such dopant diffusion, thereby improvingthe quality and performance of the semiconductor device 200.

It is understood that in some embodiments, one or more of the layers280-330 and/or the metal gate electrode 400 formed in the opening 260may have a “U-shape” cross-sectional profile. For example, some of theselayers 280-330 and/or the layers of the metal gate electrode 400 mayhave portions that are formed on the sidewalls of the openings 260. Forexample, as shown in FIG. 7A, the metal gate electrode 400 may includeone or more work function metal layers 400A and a fill metal component,as discussed above. The one or more work function metal layers 400A maybe formed on the sidewalls of the opening 260 and on the layer 330 andtherefore have a U-shape, and the fill metal component 400B may beformed over the one or more work function metal layers 400A. Inaddition, it is understood that additional fabrication processes may beperformed to complete the fabrication of the semiconductor device 200.For example, a multi-layered interconnect structure may be formed toprovide electrical interconnections to the various components of thesemiconductor device 200. Other processes such as testing or packagingmay also be performed. These additional processes are also notspecifically illustrated herein for reasons of simplicity.

The implementation of the diffusion blocking layer 300 offers benefitsother than reduction in dopant diffusion. Another benefit is moreflexibility with respect to capacitance matching. For example, referringnow to FIG. 8, a simplified capacitance model of a negative capacitancetransistor is illustrated according to aspects of the presentdisclosure. The negative capacitance transistor may be an embodiment ofthe semiconductor device 200, that is, a negative capacitance transistorhaving the diffusion blocking layer 300 sandwiched between the high-kdielectric layer 290 and the ferroelectric layer 330.

The capacitance model corresponds to a portion of the negativecapacitance transistor between ground (Gnd) and a gate voltage (Vg)node. A capacitance of the MOS transistor is denoted as C_(MOS), whichis made up of a gate oxide capacitance Cox and a depletion regioncapacitance C_(S). Cox may be determined by the material compositionsand/or the thicknesses of the interfacial layer 280 and the high-kdielectric layer 290, and C_(S) may be determined by the processconditions and designs of the source/drain regions 230-231 and thechannel region 240. The capacitance model further includes C_(FE), whichrepresents a capacitance of the ferroelectric layer 330, as well asC_(BL), which represents a capacitance of the diffusion block layer 300.C_(FE) may be determined by the material composition and/or thethickness of the ferroelectric layer 330, and C_(BL) may be determinedby the material composition and/or the thickness of the diffusionblocking layer 300.

In order to optimize the performance of negative capacitance devices,capacitance matching may be needed. For example, the variouscapacitances discussed above may be adjusted based on factors such asthickness or material composition. Since conventional negativecapacitance devices lack the diffusion blocking layer 300, theimplementation of the diffusion blocking layer 300 herein offers anadditional element for capacitance matching or tuning. In other words,whereas conventional negative capacitance devices can only rely onC_(MOS) and C_(FE) for capacitance tuning, the present disclosure canuse not only C_(MOS) and C_(FE) for capacitance tuning, but also C_(BL)as well. In addition, the interfacial layer (which contributes toC_(MOS)) does not provide much capacitance tuning flexibility, since ittypically has a lower dielectric constant and may be confined to bewithin a certain thickness range by design requirements. Likewise, theprocess conditions and/or source/drain/channel design layer (which alsocontribute to C_(MOS)) may not be flexibly changed either, which furtherlimits the capacitance matching or tuning flexibility of conventionalnegative capacitance devices. In comparison, the material compositionand the thickness of the diffusion blocking layer 300 implemented hereincan be flexibly changed depending on the capacitance tuningrequirements. If any changes need to be made to other layers, forexample to the ferroelectric layer for it to achieve specificferroelectric properties with respect to remanent polarization orcoercivity, the material composition and/or the thickness of thediffusion blocking layer 300 may be adjusted accordingly to compensatefor the changes in C_(FE). As such, the implementation of the diffusionblocking layer improves capacitance matching in addition to blockingdopant diffusion.

FIGS. 9A-9C illustrate remanent polarization v.s. coercive field plotsof various materials. For example, FIG. 9A is a graph illustratingremanent polarization (Y-axis) v.s. coercive field (X-axis) for hafniumoxide. The hafnium oxide material is associated with a monolithic phase.FIG. 9B is a graph illustrating remanent polarization v.s. coercivefield for zirconium oxide. The zirconium oxide has a tetragonal phase.FIG. 9C is a graph illustrating remanent polarization v.s. coercivefield for hafnium oxide doped with zirconium. The hafnium oxide dopedwith zirconium has an orthorhombic phase. As is seen in FIG. 9C, thegraph of remanent polarization v.s. coercive field for hafnium oxidedoped with zirconium has a hysteresis, shaped similar to an S-curve.This is what is desired for a negative capacitance ferroelectricmaterial, and it may be achieved by capacitance tuning. As discussedabove, the diffusion blocking layer 300 provides an extra element forcapacitance tuning and thus may facilitate the achievement of thehysteresis.

It is understood that the various aspects of the present disclosureapply not only to traditional planar devices, but also to the morerecently developed 3-D FinFET transistors as well. An example FinFETdevice and the fabrication thereof is described in more detail in U.S.Pat. No. 9,711,533, entitled “FINFET DEVICES HAVING DIFFERENTSOURCE/DRAIN PROXIMITIES FOR INPUT/OUTPUT DEVICES AND NON-INPUT/OUTPUTDEVICES AND THE METHOD OF FABRICATION THEREOF”, which was filed on Oct.16, 2015 and issued on Jul. 18, 2017, the disclosure of which is herebyincorporated by reference in its entirety.

FIG. 10 is a flowchart of a method 900 of fabricating a semiconductordevice. The method 900 includes a step 910 of forming a dielectric layerover a channel region of a transistor. In some embodiments, the formingof the dielectric layer comprises depositing a dielectric layer having adielectric constant greater than a dielectric constant of silicondioxide, for example hafnium oxide.

The method 900 includes a step 920 of depositing a diffusion blockinglayer over the dielectric layer. In some embodiments, the diffusionblocking layer may be formed by an atomic layer deposition (ALD)process. In some embodiments, the forming of the diffusion blockinglayer comprises forming aluminum oxide, tantalum oxide, titanium oxide,lanthanum oxide, or praseodymium oxide as the diffusion blocking layer.

The method 900 includes a step 930 of forming a ferroelectric layer overthe diffusion blocking layer. In some embodiments, the forming of theferroelectric layer comprises depositing a material that containshafnium zirconium oxide, hafnium silicon oxide, hafnium aluminum oxide,lead zirconium titanium oxide, or barium titanium oxide.

The method 900 includes a step 940 of doping the ferroelectric layerwith dopants. In some embodiments, the dopants include zirconium,silicon, aluminum, lead, barium, or titanium. It is understood, however,that in some embodiments, the ferroelectric layer may already be dopedwhen the step 930 is performed. In other words, the step 930 deposits analready-doped ferroelectric layer, and thus the step 940 of doping theferroelectric layer may be skipped in some embodiments.

The method 900 includes a step 950 of forming a gate electrode over theferroelectric layer. In some embodiments, the step 950 of forming of thegate electrode comprises performing one or more annealing processes,wherein the diffusion blocking layer reduces dopant diffusion from theferroelectric layer into the dielectric layer during the one or moreannealing processes. In some embodiments, the forming of the gateelectrode comprises forming a plurality of metal layers, where arespective one of the one or more annealing processes is performed aftera formation of each of the metal layers, and wherein the diffusionblocking layer reduces the dopant diffusion during each of the one ormore annealing processes.

It is understood that additional processes may be performed before,during, or after the steps 910-950 of the method 900. For example, themethod 900 may include a step of, before the step 910 of forming thedielectric layer: forming an interfacial oxide layer over the channelregion, wherein the dielectric layer is formed over the interfacialoxide layer. As another example, a further annealing process may beperformed after the ferroelectric layer is formed but before the gateelectrode is formed, wherein the diffusion blocking layer reduces thedopant diffusion during the further annealing process. As anotherexample, the method may include performing a gate replacement process inwhich a dummy gate structure is removed, and the steps 910-950 areformed thereafter to form a functional gate structure to replace theremoved dummy gate structure. As yet another example, an interconnectstructure may be formed to couple various devices into a functionalcircuit. The interconnection structure may include metal linesdistributed in multiple metal layers, contacts to connect the metallines to devices (such as sources, drains and gates), and vias tovertically connect metal lines in the adjacent metal layers. Theformation of the interconnect structure may include damascene process orother suitable procedure. The metal components (metal lines, contactsand vias) may include copper, aluminum, tungsten, metal alloy, silicide,doped polysilicon, other suitable conductive materials, or a combinationthereof. Other processes may include processes such as testing andpackaging. For reasons of simplicity, these additional steps are notdiscussed herein in detail.

In summary, the present disclosure forms a negative capacitancecapacitor that includes: an interfacial layer formed over a channelregion in a substrate, a high-k dielectric layer formed over theinterfacial layer, a diffusion blocking layer formed over the high-kdielectric layer, a ferroelectric layer (doped with dopants) formed overthe diffusion blocking layer, and a metal gate electrode formed over theferroelectric layer. The diffusion blocking layer has a differentmaterial composition from the high-k dielectric layer (though thediffusion blocking layer itself may also have a relatively highdielectric constant). At least the diffusion blocking layer is notimplemented in conventional negative capacitance devices. According tothe various aspects of the present disclosure, the material compositionof the diffusion blocking layer is specifically configured to prevent orreduce dopants from the ferroelectric layer from diffusing outwards, sothat the dopants would not diffuse into the layers below, such as thehigh-k dielectric layer, the interfacial layer, or the channel region.

Based on the above discussions, it can be seen that the presentdisclosure offers advantages over conventional methods. It isunderstood, however, that other embodiments may offer additionaladvantages, and not all advantages are necessarily disclosed herein, andthat no particular advantage is required for all embodiments. Oneadvantage is improved device performance. For example, the fabricationof negative capacitance devices may involve one or more high temperatureannealing processes, which may be performed after the formation of theferroelectric layer and/or during the formation of the metal gateelectrode. In conventional negative capacitance devices, dopants from aferroelectric layer may diffuse into layers below (e.g., a high-k gatedielectric, an interfacial layer, or even a channel region) as a resultof these high temperature annealing processes. The dopants contaminatethese layers and may degrade device performance. According to thepresent disclosure, the diffusion blocking layer substantially preventsor reduces such dopant diffusion, which maintains the purity of thelayers below the ferroelectric layer. Consequently, device performanceis improved compared to conventional devices. Another advantage is moreflexibility with respect to capacitance matching. As discussed above,conventional negative capacitance devices lack the diffusion blockinglayer, and capacitance matching may be accomplished only by tuningC_(MOS) and/or C_(FE). In comparison, the present disclosure provides anadditional component for capacitance matching through the addition ofthe diffusion blocking layer, which has a capacitance of C_(BL). Theextra degree of freedom offered by the diffusion blocking layer meansthat parameters such as remanent polarization and/or coercive field ofthe negative capacitance device may be tuned to achieve optimalperformance. Other advantages include compatibility with existingfabrication processes and low cost of implementation.

One aspect of the present disclosure provides a semiconductor device.The semiconductor device includes a substrate. The semiconductor deviceincludes a dielectric layer disposed over a portion of the substrate.The semiconductor device includes a diffusion blocking layer disposedover the dielectric layer. The diffusion blocking layer and thedielectric layer have different material compositions. The semiconductordevice includes a ferroelectric layer disposed over the diffusionblocking layer.

Another aspect of the present disclosure provides a semiconductordevice. A channel region is formed in a substrate. A gate dielectriclayer is located over the channel region. The gate dielectric layer hasa dielectric constant greater than a dielectric constant of silicondioxide. An interfacial oxide layer is disposed between the channelregion and the gate dielectric layer. A diffusion blocking layer islocated over the gate dielectric layer. The diffusion blocking layer andthe gate dielectric layer contain different types of high-k dielectricmaterials. A ferroelectric layer is located over the diffusion blockinglayer. The ferroelectric layer contains dopants. A material compositionof the diffusion blocking layer is configured to be non-reactive withthe dopants and to reduce dopant diffusion from the ferroelectric layerinto the gate dielectric layer. A metal gate electrode is located overthe ferroelectric layer. The semiconductor device is a negativecapacitance device.

Yet another aspect of the present disclosure provides a method offabricating a semiconductor device. A dielectric layer is formed over achannel region of a transistor. A diffusion blocking layer is depositedover the dielectric layer. A ferroelectric layer is formed over thediffusion blocking layer. The ferroelectric layer contains dopants. Agate electrode is formed over the ferroelectric layer. One or moreannealing processes occurs after the forming of the ferroelectric layerand before or during a formation of the gate electrode. The diffusionblocking layer reduces dopant diffusion from the ferroelectric layerinto the dielectric layer during the one or more annealing processes.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a substrate;a first layer disposed over a portion of the substrate, wherein thefirst layer contains a dielectric material having a dielectric constantgreater than a dielectric constant of silicon oxide; a second layerdisposed over the first layer, wherein the second layer contains a metaloxide or a metal nitride; and a third layer disposed over the secondlayer, wherein the third layer contains a ferroelectric material;wherein the first layer, the second layer, and the third layer areportions of a gate.
 2. The semiconductor device of claim 1, wherein thegate is a gate of a negative capacitance transistor.
 3. Thesemiconductor device of claim 1, further comprising a metal-containinggate electrode disposed over the third layer.
 4. The semiconductordevice of claim 1, wherein the second layer contains: aluminum oxide,tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide,aluminum nitride, tantalum nitride, titanium nitride, lanthanum nitride,or praseodymium nitride.
 5. The semiconductor device of claim 1, whereinthe ferroelectric material includes an oxide material doped with adopant.
 6. The semiconductor device of claim 5, wherein: the oxidematerial of the ferroelectric material includes: hafnium zirconiumoxide, hafnium silicon oxide, hafnium aluminum oxide, lead zirconiumtitanium oxide, or barium titanium oxide; and the dopant of theferroelectric material includes zirconium, silicon, aluminum, lead,barium, titanium, or a polymer.
 7. The semiconductor device of claim 1,wherein: the second layer contains aluminum oxide; and the third layercontains a hafnium-based material doped with a zirconium dopant.
 8. Thesemiconductor device of claim 1, wherein the second layer includes aplurality of sub-layers that each have a different material composition.9. The semiconductor device of claim 1, wherein the second layer has adielectric constant in a range between about 15 and about
 60. 10. Thesemiconductor device of claim 1, wherein a thickness of the second layeris in a range between about 1 nanometer and about 3 nanometers.
 11. Asemiconductor device, comprising: a substrate; a high-k dielectric layerdisposed over a portion of the substrate, wherein the high-k dielectriclayer contains a dielectric material having a dielectric constantgreater than a dielectric constant of silicon oxide; a plurality ofdiffusion-blocking layers disposed over the high-k dielectric layer,wherein each of the diffusion-blocking layers contains a metal oxide ora metal nitride, and wherein the diffusion-blocking layers havedifferent material compositions from one another; and a ferroelectriclayer disposed over the diffusion-blocking layers, wherein theferroelectric layer has a different material composition than each ofthe diffusion-blocking layers; and a metal gate electrode disposed overthe ferroelectric layer.
 12. The semiconductor device of claim 11,wherein each of the diffusion-blocking layers contains: aluminum oxide,tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide,aluminum nitride, tantalum nitride, titanium nitride, lanthanum nitride,or praseodymium nitride.
 13. The semiconductor device of claim 11,wherein the ferroelectric layer includes a hafnium-based material thatis doped with zirconium, silicon, aluminum, lead, barium, titanium, or apolymer.
 14. A method, comprising: depositing a dielectric layer over achannel region of a transistor, wherein the dielectric layer contains adielectric material having a dielectric constant greater than adielectric constant of silicon oxide; depositing a diffusion-blockingstructure over the dielectric layer, wherein the diffusion-blockingstructure contains a metal oxide or a metal nitride material; depositinga hafnium-based layer over the diffusion-blocking structure, and whereinthe hafnium-based layer has a different material composition than thediffusion-blocking structure; doping the hafnium-based layer with adopant; and performing a first annealing process during or after thedepositing of the hafnium-based layer, wherein the first annealingprocess causes the dopant to diffuse out of the hafnium-based layer. 15.The method of claim 14, wherein the diffusion-blocking structure reducesa diffusion of the dopant from the hafnium-based layer into thedielectric layer during the first annealing process.
 16. The method ofclaim 14, further comprising: forming a metal gate electrode over thehafnium-based layer, wherein the forming of the metal gate electrodeincludes performing a second annealing process.
 17. The method of claim16, wherein the diffusion-blocking structure reduces a diffusion of thedopant from the hafnium-based layer into the dielectric layer during thesecond annealing process.
 18. The method of claim 14, wherein thedepositing the diffusion-blocking structure comprises depositingaluminum oxide, tantalum oxide, titanium oxide, lanthanum oxide,praseodymium oxide, aluminum nitride, tantalum nitride, titaniumnitride, lanthanum nitride, or praseodymium nitride as thediffusion-blocking structure.
 19. The method of claim 14, wherein thedepositing the diffusion-blocking structure comprises depositing aplurality of diffusion blocking layers that each have a differentmaterial composition.
 20. The method of claim 14, wherein the dopingcomprises doping the hafnium-based layer with zirconium, silicon,aluminum, lead, barium, titanium, or a polymer.